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| (R) STPS10H100CT/CG/CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) 2x5A 100 V 175C 0.61 V K A1 K A2 K FEATURES AND BENEFITS HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED ENVIRONMENT. LOW LEAKAGE CURRENT AT HIGH TEMPERATURE. LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER. A2 A2 K A1 A1 D2PAK STPS10H100CG I2PAK STPS10H100CG-1 K DESCRIPTION Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. Packaged in TO220AB, D2PAK and I2PAK. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 165C = 0.5 per diode per device Parameter Repetitive peak reverse voltage Value 100 10 5 10 180 1 - 65 to + 175 175 10000 Unit V A A A A C C V/s A2 A1 K TO-220AB STPS10H100CT tp = 10 ms sinusoidal tp = 2 s square F = 1kHz dPtot 1 < thermal runaway condition for a diode on its own heatsink Rth(j-a) dTj 1/6 July 1999 - Ed: 1B STPS10H100CT/CG/CG-1 THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) Junction to case Parameter Per diode Total Coupling Value 2.2 1.3 0.3 C/W Unit C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF ** Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% Min. Typ. 1.3 Max. 3.5 4.5 0.73 0.61 0.85 0.71 Unit A mA V VR = VRRM IF = 5 A 0.57 IF = 10 A 0.66 To evaluate the maximum conduction losses use the following equation : P = 0.51 x IF(AV) + 0.02 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) = 0.1 = 0.05 =1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) Rth(j-a)=Rth(j-c) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 6 5 4 3 T Rth(j-a)=15C/W 2 1 =tp/T T tp =tp/T IF(av) (A) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 tp Tamb(C) 50 75 100 125 150 175 0 0 25 2/6 STPS10H100CT/CG/CG-1 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) IM(A) Fig. 4: Relative variation of thermal impedance junction to case versus pulse duration (per diode). 120 100 80 1.0 0.8 Tc=50C Zth(j-c)/Rth(j-c) 0.6 0.4 0.2 = 0.5 60 Tc=75C = 0.2 = 0.1 Single pulse 40 Tc=125C T 20 IM t =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 0.0 1E-3 tp(s) 1E-2 1E-1 =tp/T tp 1E+0 Fig. 5: Reverse leakage current versus reverse voltage applied (typical values, per diode). Fig. 6: Junction capacitance versus reverse voltage applied (typical values, per diode). 1E+4 1E+3 1E+2 1E+1 1E+0 IR(A) Tj=150C Tj=125C Tj=100C C(pF) 1000 F=1MHz Tj=25C 100 Tj=25C 1E-1 VR(V) 1E-2 0 10 20 30 40 50 60 70 80 90 100 VR(V) 10 1 2 5 10 20 50 100 Fig. 7: Forward voltage drop versus forward current (maximum values, per diode). Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m) (D2PAK). Rth(j-a) (C/W) 100.0 IFM(A) Tj=125C Typical values 80 70 Tj=125C 60 50 40 30 20 10 10.0 Tj=150C Typical values Tj=25C 1.0 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 S(Cu) (cm) 0 2 4 6 8 10 12 14 16 18 20 0 3/6 STPS10H100CT/CG/CG-1 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 Millimeters Min. Max. 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 Inches Min. Max. 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 D L L3 A1 B2 B G A2 C R M * V2 * FLAT ZONE NO LESS THAN 2mm FOOT PRINT in millimeters 16.90 10.30 1.30 5.08 3.70 8.90 4/6 STPS10H100CT/CG/CG-1 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A E L2 c2 Millimeters Min. Max. 4.60 2.69 0.93 1.17 1.17 0.60 1.36 9.35 2.70 10.4 13.6 3.78 1.40 4.40 2.49 0.70 1.14 1.14 0.45 1.23 8.95 2.40 10.0 13.1 3.48 1.27 Inches Min. 0.173 0.098 0.028 0.044 0.044 0.018 0.048 0.352 0.094 0.394 0.516 0.137 0.050 Max. 0.181 0.106 0.037 0.046 0.046 0.024 0.054 0.368 0.106 0.409 0.535 0.149 0.055 A A1 b b1 b2 D c c2 D L1 b2 L b1 b e A1 e E L L1 L2 c 5/6 STPS10H100CT/CG/CG-1 PACKAGE MECHANICAL DATA TO-220AB DIMENSIONS REF. A C L5 L7 L6 L2 F2 F1 L9 L4 F G1 G M E D Millimeters Min. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Inches Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 H2 Dia A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Cooling method: C. Recommended torque value: 0.55 m.N Maximum torque value 0.70 m.N Ordering type STPS10H100CT STPS10H100CG STPS10H100CG-TR STPS10H100CG-1 Epoxy meets UL94,V0 Marking STPS10H100CT STPS10H100CG STPS10H100CG STPS10H100CG Package TO-220AB D2PAK D2PAK I2PAK Weight 2.20g 1.48g 1.48g 1.49g Base qty 50 50 1000 50 Delivery mode Tube Tube Tape and reel Tube Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/6 |
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